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m) GaN layers for 650V-1200V+ devices, and offers superior thermal conductivity (170-230 W/mK) compared to Si substrates.
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Aluminum nitride GaN-on-QST - ALN Ceramic Substrate,Alumina ...
huaqingcn.com
https://www.huaqingcn.com › aluminum-nitride-gan-on-...
huaqingcn.com
https://www.huaqingcn.com › aluminum-nitride-gan-on-...
1.Material:Aluminum Nitride. 2.Function:Insulation and heat dissipation ceramic. 3.Type:Ceramic. 4.Color:Gray. 5.Can be customed:yes,please provide drawings for ...
aluminum nitride wafers based on GaN-on-QST
Fujian Huaqing Electronic Material Technology Co.,Ltd
https://www.huaqingcn.com › aluminum-nitride-wafers-...
Fujian Huaqing Electronic Material Technology Co.,Ltd
https://www.huaqingcn.com › aluminum-nitride-wafers-...
We just produced a 310 * 310 * 1.0mm of thermal conductivity aluminum nitride ceramic that can be used as a semiconductor 12-inch GaN-on-QST substrate.Read more
QST Platform Enables Scalable GaN Manufacturing
Power Electronics News
https://www.powerelectronicsnews.com › qst-platform-e...
Power Electronics News
https://www.powerelectronicsnews.com › qst-platform-e...
Jun 18, 2024 — QST uses polycrystalline aluminum nitride (poly-AlN) as its core material, which has a thermal conductivity close to GaN, minimizing stress and ...Read more
Reducing wafer bow in GaN-on-QST growth
Semiconductor Today
https://www.semiconductor-today.com › imec-160126
Semiconductor Today
https://www.semiconductor-today.com › imec-160126
Jan 16, 2026 — Using Gen II substrates enabled a much simpler transition between the Si(111) surface of the QST wafer to the GaN layers with aluminium nitride ...Read more
Characteristic Analysis of AlGaN/GaN HEMT with Composited ...
PubMed Central (PMC) (.gov)
https://pmc.ncbi.nlm.nih.gov › articles › PMC8623141
PubMed Central (PMC) (.gov)
https://pmc.ncbi.nlm.nih.gov › articles › PMC8623141
by CR Huang2021Cited by 11 — The GaN on the QST device exhibited a superior heat dissipation performance to the GaN on a Si device because of the higher thermal conductivity of the QST ...Read more
Propelling GaN electronics adoption: An interview with QROMIS
The American Ceramic Society
https://bulletin.ceramics.org › article › propelling-gan-e...
The American Ceramic Society
https://bulletin.ceramics.org › article › propelling-gan-e...
The AlN ceramic core of the QST is also electrically insulating and compatible with the manufacture of radio frequency devices due to low absorption loss, ...Read more
OKI Technical Review,Issue 242,New Technology using QST ...
oki.com
http://www.oki.com › otr › uploads › otr-242-R04
oki.com
http://www.oki.com › otr › uploads › otr-242-R04
PDF
The QST substrate has a CTE matched Core containing polycrystalline. AlN, which has a CTE close to that of GaN. The area surrounding the core is coated with ...Read more
12inch Aluminum Nitride Ceramic Substrate GaN-On-QST
Wuxi Special Ceramic Electrical Co.,Ltd
https://www.al2o3ceramics.com › sale-42658591-12inc...
Wuxi Special Ceramic Electrical Co.,Ltd
https://www.al2o3ceramics.com › sale-42658591-12inc...
This means that these tubes can efficiently transfer heat, making them suitable for applications that require heat dissipation, such as in electronic devices ...
Qromis, Inc.
Frost & Sullivan
https://www.frost.com › uploads › 2024/06 › Qr...
Frost & Sullivan
https://www.frost.com › uploads › 2024/06 › Qr...
PDF
QST's AlN-based substrate core boasts superior thermal conductivity comparable to GaN on SiC and GaN, making it suitable for RF applications. Moreover, QST ...Read more
10 pages
Low-stress MOCVD-grown 15 μm GaN layers on 200 mm ...
AIP Publishing
https://pubs.aip.org › aip › apl › article › Low-stress-M...
AIP Publishing
https://pubs.aip.org › aip › apl › article › Low-stress-M...
Dec 18, 2025 — In this paper, we report a buffer design with two unintentionally doped-GaN (u-GaN) layers that replace ternary multiple stress management ...Read more
