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GaN-on-QST (Qromis Substrate Technology) utilizing Aluminum Nitride (AlN) ceramic as the core substrate enables the fabrication of high-performance, crack-free Gallium Nitride (GaN) devices, such as HEMTs, with a coefficient of thermal expansion (CTE) matched to GaN. These substrates allow for thick, high-voltage epitaxy (over 1500 V) and 6- to 8-inch, and soon 12-inch, production in standard CMOS fabs.
Key Aspects of AlN Substrate / GaN-on-QST
- Technology Foundation: QST® uses a polycrystalline AlN (poly-AlN) core, which functions as a "native-like" substrate due to its matching CTE with GaN, preventing cracking during high-temperature growth.
- Performance Benefits:
- High Voltage: Enables thick GaN buffer layers, achieving >1500V breakdown voltage, suitable for power conversion.
- Thermal Management: The AlN core provides superior heat dissipation compared to Silicon (Si) substrates, lowering operating temperatures.
- Scalability: Compatible with 6-inch, 8-inch, and up to 12-inch wafer manufacturing.
- Foundry Compatibility: QST substrates are engineered to be compatible with standard silicon CMOS fabrication lines, allowing for standard, cost-effective, high-volume production.
- Key Suppliers: Qromis developed the QST technology, with licensing for substrate production and epitaxy through partners like Vanguard International Semiconductor (VIS) and Shin-Etsu Chemical. Fujian Huaqing also provides AlN ceramic substrates for this application.
This technology is critical for advancing GaN power devices beyond the limitations of silicon substrates, particularly in high-power and high-temperature scenarios.
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Web results
12inch aluminum nitride ceramic substrate GaN-on-QST
Fujian Huaqing Electronic Material Technology Co.,Ltd
https://www.huaqingcn.com › 12inch-aluminum-nitride-...
Fujian Huaqing Electronic Material Technology Co.,Ltd
https://www.huaqingcn.com › 12inch-aluminum-nitride-...
1.Material:Aluminum Nitride. 2.Function:Insulation and heat dissipation ceramic. 3.Type:Ceramic. 4.Color:Gray. 5.Can be customed:yes,please provide drawings for ...Read more
12inch Aluminum Nitride Ceramic Substrate GaN-On-QST
Wuxi Special Ceramic Electrical Co.,Ltd
https://www.al2o3ceramics.com › sale-42658591-12inc...
Wuxi Special Ceramic Electrical Co.,Ltd
https://www.al2o3ceramics.com › sale-42658591-12inc...
GaN-on-QST is provided by Qromis Company of the United States, which can be used as a silicon substrate or a seed crystal. In 2017, they collaborated with ...Read more
aluminum nitride wafers based on GaN-on-QST
Fujian Huaqing Electronic Material Technology Co.,Ltd
https://www.huaqingcn.com › aluminum-nitride-wafers-...
Fujian Huaqing Electronic Material Technology Co.,Ltd
https://www.huaqingcn.com › aluminum-nitride-wafers-...
We just produced a 310 * 310 * 1.0mm of thermal conductivity aluminum nitride ceramic that can be used as a semiconductor 12-inch GaN-on-QST substrate.Read more
Web results
The Study of Normally-on Power GaN HEMTs in QST ...
IEEE
https://ieeexplore.ieee.org › document
IEEE
https://ieeexplore.ieee.org › document
by PT Chen2024Cited by 1 — Through extensive experimentation involving GaN-on-QST and GaN-on-silicon (Si), and substrates, we highlighted the advantages of QST, particularly its poly-AlN ...Read more
QST Platform Enables Scalable GaN Manufacturing
Power Electronics News
https://www.powerelectronicsnews.com › qst-platform-e...
Power Electronics News
https://www.powerelectronicsnews.com › qst-platform-e...
Jun 18, 2024 — QST uses polycrystalline aluminum nitride (poly-AlN) as its core material, which has a thermal conductivity close to GaN, minimizing stress and ...Read more
Buffers for GaN power on AlN substrate
Semiconductor Today
https://www.semiconductor-today.com › imec-210722
Semiconductor Today
https://www.semiconductor-today.com › imec-210722
Jul 21, 2022 — The growth substrates included a Si (111) top layer bonded to the QST poly-AlN by silicon (di)oxide (SiO). The RSSL buffer stacks (Figure 1) ...Read more
Characteristic Analysis of AlGaN/GaN HEMT with Composited ...
PubMed Central (PMC) (.gov)
https://pmc.ncbi.nlm.nih.gov › articles › PMC8623141
PubMed Central (PMC) (.gov)
https://pmc.ncbi.nlm.nih.gov › articles › PMC8623141
by CR Huang2021Cited by 11 — The poly-aluminum nitride (AlN) substrate (QST) is promising for GaN-based HEMTs because of its high thermal dissipation efficiency and high mechanical strength ...Read more
GaN on QST® Templates
Kyma Technologies
https://www.kymatech.com › product-pages › gan-on-q...
Kyma Technologies
https://www.kymatech.com › product-pages › gan-on-q...
Kyma's 200-mm HVPE GaN on QST® Templates consist of 10 microns of HVPE GaN grown on 200-mm diameter QST® substrates provided by Qromis, Inc.Read more
Scholarly articles for AlN substrate GaN-on-QST | |
… layer on high-heat dissipation poly-aln substrates - ‎Huang - Cited by 11 … power HEMTs on Si, SOI, and poly-AlN substrates - ‎Magnani - Cited by 12 | |
Web results
OKI Technical Review,Issue 242,New Technology using QST ...
oki.com
http://www.oki.com › otr › uploads › otr-242-R04
oki.com
http://www.oki.com › otr › uploads › otr-242-R04
PDF
The QST substrate has a CTE matched Core containing polycrystalline. AlN, which has a CTE close to that of GaN. The area surrounding the core is coated with ...Read more