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GaAs MMIC Push Pull Modules
Shenzhen Sanland Technology Co., Ltd.
https://www.sanlandtech.com › gaas-mmic-push-pull-m...
Shenzhen Sanland Technology Co., Ltd.
https://www.sanlandtech.com › gaas-mmic-push-pull-m...
Sanland is a professional and reliable manufacturer of GaAs MMIC Push Pull Modules. We look forward to serving you for all your needs.
34 dB, 870 MHz GaAs push-pull forward amplifier
NXP
https://www.nxp.com › ... › No Longer Manufactured
NXP
https://www.nxp.com › ... › No Longer Manufactured
This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical ...Read more
Egi10002524PG GaAs MMIC Push Pull Amplifier Modules
Shenzhen Sanland Technology Co., Ltd.
https://www.sanlandtech.com › egi10002524pg-gaas-m...
Shenzhen Sanland Technology Co., Ltd.
https://www.sanlandtech.com › egi10002524pg-gaas-m...
The hybrid amplifier module operates over a frequency range of 47 to 003 MHz at a voltage supply of +24V(DC), employing GaAs MMIC.Read more
A high-yield, 3—7-GHz, 0.5-W push-pull GaAs MMIC ...
IEEE
https://ieeexplore.ieee.org › document
IEEE
https://ieeexplore.ieee.org › document
by SB Moghe2005Cited by 2 — The amplifier features small chip size (1.2 mm sq.), high gain (12 ± 1.5 dB), high power-added efficiency (20 percent), good RF yield (57 percent, and high ...Read more
QPA4428
Qorvo
https://www.qorvo.com › products › QPA4428
Qorvo
https://www.qorvo.com › products › QPA4428
The QPA4428 is a GaAs pHEMT/MESFET 75-ohm push-pull RF amplifier IC featuring 28 dB of flat gain and low noise. This IC is designed to support DOCSIS 3.1 ...Read more
A Push-Pull 6-12GHz GaN Dual-Stage MMIC PA with ...
research.chalmers.se
https://research.chalmers.se › file › 538853_Fulltext
research.chalmers.se
https://research.chalmers.se › file › 538853_Fulltext
PDF
by G LasserCited by 6 — The MMIC PA is fully characterized and 26 dB of small signal gain and a peak output power of 37.2 dBm with a PAE of 30.5% is measured at. 7 GHz. Keywords — GaN, ...Read more
5 pages
California Eastern Laboratories - CEL
cel.com
http://www.cel.com › pdf › appnotes › cable96
cel.com
http://www.cel.com › pdf › appnotes › cable96
PDF
by D McNamara — The. MMIC is fabricated using a standard NEC. GaAs process with a gate length of 1µm, breakdown voltage (BVgd) of 18V and a maxi- mum current density of 310mA/ ...Read more
Monolithic Microwave Integrated Circuit Technology for ...
NASA (.gov)
https://ntrs.nasa.gov › api › citations › downloads
NASA (.gov)
https://ntrs.nasa.gov › api › citations › downloads
PDF
by GE Ponchak1988Cited by 3 — Recent advances in GaAs MMIC technology have led to high-performance devices which show promise for insertion into these next generation systems. The status and ...Read more
A 43-Gbps Lithium Niobate Modulator Driver ...
AMS Acta
http://amsacta.unibo.it › GaAs_poster_Virk
AMS Acta
http://amsacta.unibo.it › GaAs_poster_Virk
PDF
by RS VirkCited by 1 — This paper describes the realization of a 43-Gbps Lithium Niobate modulator driver module. The NRZ driver module utilizes four stages of GaAs p-HEMT MMIC ...Read more
