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Qromis Substrate Technology (QST) utilizes a polycrystalline aluminum nitride (poly-AlN) core to create CTE-matched, crack-free, large-diameter (up to 12-inch) substrates for high-quality GaN epitaxy. These substrates enable superior thermal management (
) and higher power efficiency compared to GaN-on-Si.
Key Aspects of AlN-based QST Substrates:
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Web results
12inch aluminum nitride ceramic substrate GaN-on-QST
Fujian Huaqing Electronic Material Technology Co.,Ltd
https://www.huaqingcn.com › 12inch-aluminum-nitride-...
Fujian Huaqing Electronic Material Technology Co.,Ltd
https://www.huaqingcn.com › 12inch-aluminum-nitride-...
1.Material:Aluminum Nitride. 2.Function:Insulation and heat dissipation ceramic. 3.Type:Ceramic. 4.Color:Gray. 5.Can be customed:yes,please provide drawings for ...Read more
aluminum nitride wafers based on GaN-on-QST
Fujian Huaqing Electronic Material Technology Co.,Ltd
https://www.huaqingcn.com › aluminum-nitride-wafers-...
Fujian Huaqing Electronic Material Technology Co.,Ltd
https://www.huaqingcn.com › aluminum-nitride-wafers-...
We just produced a 310 * 310 * 1.0mm of thermal conductivity aluminum nitride ceramic that can be used as a semiconductor 12-inch GaN-on-QST substrate.Read more
12inch Aluminum Nitride Ceramic Substrate GaN-On-QST
Wuxi Special Ceramic Electrical Co.,Ltd
https://www.al2o3ceramics.com › sale-42658591-12inc...
Wuxi Special Ceramic Electrical Co.,Ltd
https://www.al2o3ceramics.com › sale-42658591-12inc...
GaN-on-QST is provided by Qromis Company of the United States, which can be used as a silicon substrate or a seed crystal. In 2017, they collaborated with ...Read more
QST Platform Enables Scalable GaN Manufacturing
Power Electronics News
https://www.powerelectronicsnews.com › qst-platform-e...
Power Electronics News
https://www.powerelectronicsnews.com › qst-platform-e...
Jun 18, 2024 — GaN boasts a wider bandgap compared with silicon. · QST exhibits a thermal expansion coefficient that closely matches GaN/AlGaN epitaxy layers ...Read more
Web results
Characteristic Analysis of AlGaN/GaN HEMT with Composited ...
PubMed Central (PMC) (.gov)
https://pmc.ncbi.nlm.nih.gov › articles › PMC8623141
PubMed Central (PMC) (.gov)
https://pmc.ncbi.nlm.nih.gov › articles › PMC8623141
by CR Huang2021Cited by 11 — The poly-aluminum nitride (AlN) substrate (QST) is promising for GaN-based HEMTs because of its high thermal dissipation efficiency and high mechanical strength ...Read more
Propelling GaN electronics adoption: An interview with QROMIS
The American Ceramic Society
https://bulletin.ceramics.org › article › propelling-gan-e...
The American Ceramic Society
https://bulletin.ceramics.org › article › propelling-gan-e...
This substrate has a core based on polycrystalline aluminum nitride (AlN) ... GaN power chip using the QST substrate technology under license from QROMIS.Read more
Reducing wafer bow in GaN-on-QST growth
Semiconductor Today
https://www.semiconductor-today.com › imec-160126
Semiconductor Today
https://www.semiconductor-today.com › imec-160126
Jan 16, 2026 — Using Gen II substrates enabled a much simpler transition between the Si(111) surface of the QST wafer to the GaN layers with aluminium nitride ...Read more
OKI Technical Review,Issue 242,New Technology using QST ...
oki.com
http://www.oki.com › otr › uploads › otr-242-R04
oki.com
http://www.oki.com › otr › uploads › otr-242-R04
PDF
The QST substrate has a CTE matched Core containing polycrystalline. AlN, which has a CTE close to that of GaN. The area surrounding the core is coated with ...Read more
Gallium nitride, 12 inches?
电子工程世界（EEWorld）
https://en.eeworld.com.cn › Icbank
电子工程世界（EEWorld）
https://en.eeworld.com.cn › Icbank
The developed 300mm QST substrate has the same thermal expansion coefficient as GaN. This enables epitaxial growth of high-quality GaN with a thickness of 300mm ...
300mm wafer for GaN devices ...
eeNews Europe
https://www.eenewseurope.com › ...
eeNews Europe
https://www.eenewseurope.com › ...
Sep 6, 2024 — The 300mm QST substrate enables GaN epitaxial growth without warping or cracks, which was unattainable on silicon wafer substrates, significantly reducing ...Read more