• Substrate Preparation: Utilizing 100mm or 150mm SOI or silicon wafers, which are cleaned using RCA cleaning processes (sulfuric acid/hydrogen peroxide).
• Deposition & Patterning: Layers of materials like metal (Al, Ti/Au) or Silicon Dioxide (
  

  ${\text{SiO}}_2$
  ) are deposited via sputtering or PECVD and patterned using photoresist masks.
• Deep Reactive Ion Etching (DRIE) : ICP (Inductively Coupled Plasma) etching is used to create deep, vertical structures, such as the proof mass and vibrating ring.
• Bonding: Anodic bonding connects the silicon structural wafer to a glass substrate or a CMOS wafer for electrical connection.
• Sacrificial Release: The device layer is released by removing oxide layers (e.g., using HF acid) to allow the inertial mass to move freely.
• Packaging: Vacuum sealing is critical to ensure high Q-factor and reliable, stable performance.

• SOI Wafer Processing: Offers precise control over structure thickness, reducing parasitic capacitance.
• Vibrating Ring Gyroscope (VRG) : Utilizes symmetrical spokes and rings for superior thermal stability.
• Surface/Bulk Hybrid: Combines surface micromachining for electrodes and bulk for the main resonator.

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Design and Considerations: Microelectromechanical System (MEMS) Vibrating Ring Resonator Gyroscopes

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